Time: 20:00
Important one liner Semiconductor Fundamentals
- Intrinsic semiconductors have equal electrons and holes.
- Doping adds controlled impurities to tailor conductivity.
- Bandgap energy determines spectral response.
- Electron mobility exceeds hole mobility in silicon.
- PN junctions enable diode rectification.
- Forward bias reduces the depletion region.
- Zener diodes maintain constant voltage.
- PCT measurement profiles doping concentration.
- MOS capacitors form inversion layers under bias.
- Carrier recombination limits lifetime.
- Impact ionization causes avalanche breakdown.
- Schottky barriers yield fast-switching diodes.
- GaN is key for blue LED emission.
- BJT current is controlled by base-emitter voltage.
- Hall effect determines carrier type and density.
- Threshold voltage depends on oxide thickness.
- Depletion width varies with bias.
- Drift-diffusion dominates DC conduction.
- Fermi level indicates electron chemical potential.
- Photogeneration creates carriers under light.
- PIN diodes are used in RF switching.
- Temperature affects bandgap energy.
- Semiconductors bridge conductors and insulators.
Keywords: semiconductor fundamentals, intrinsic and extrinsic semiconductors, PN junction basics, semiconductor bandgap, carrier mobility, MOS capacitor operation, Zener diode, BJT and MOSFET, photogeneration, Hall effect in semiconductors, avalanche breakdown, GaN LEDs, semiconductor quiz